|(hardware, storage)||Page Mode Dynamic Random Access Memory - A technique used to support faster
sequential access to DRAM by allowing any number of accesses
to the currently open row to be made after supplying the row address just once.|
The RAS signal is kept active, and with each falling edge of the CAS\ signal a new column address can be supplied and the corresponding bits can be accessed. This is faster than a full RAS-CAS cycle because only the shorter Column Access Time needs to be obeyed.
Note that strictly speaking such a DRAM is not a true random access memory since accesses to the open row are faster than to other locations.
EDO RAM is replacing Page Mode DRAM in many new microcomputers.